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Gentec-EO PH100-SiUV-D0 Photodiode Detector

Updated:2025-03-13

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Product Details

Gentec-EO PH100-SiUV-D0 Photodiode Detector Description:

Datasheet(CN) Datasheet(EN) PC-Gentec-EO User's Manual PH and PE User's Manual

Gentec-EO PH100-SiUV-D0 Photodiode Detector for laser power measurement up to 4 mW.

Measurement capability in the picowatt level

Photodiode-based detector offering a fast response for VIS-NIR wavelengths. Our silicon absorber makes it possible to measure very low powers down to the picowatt level.

Wide dynamic range

Very low noise

Fast response

Not sensitive to the surrounding environment

Optional INTEGRA (USB or RS-232) output

When you choose the INTEGRA output option you get an all-in-one measurement instrument that combines both the detector and the meter in one convenient product. Plug the detector in your PC, install our free software and start measuring.

The most cost-efficient solution

Same measurement performance as our other solutions

No compromise on interface functions and features

Compact solution for OEM applications and field servicing

Save money on recalibration with an all-in-one instrument

Key Features

Large apertures

10 mm ? for the silicon sensors

3 versions

Silicon 350 - 1080 nm, up to 750 mW

Silicon-UV 210 - 1080 nm, up to 38 mW

Germanium 800 - 1650 nm, up to 500 mW

Choice of attenuators

Models with attenuators include a calibration both with and without the removable filter

High accuracy

The new PH100-SI-HA presents the lowest calibration uncertainty to date.

Precise calibration

Wavelength selection in 1 nm steps

Smart interface

Containing all the calibration data

Specifications

Measurement capabilities
Maximum average power 4 mW
Noise equivalent power 10 pW
Spectral range 210 - 1080 nm
Typical rise time 0.2 s
Power calibration uncertainty ±18 % (210 - 229 nm)
±8.0 % (230 - 254 nm)
±6.5 % (255 - 399 nm)
±2.5 % (400 - 899 nm)
±4.0 % (900 - 1009 nm)
±7.5 % (1010 - 1080 nm)
Peak sensitivity 0.45 A/W @ 850 nm
Minimum repetition rate 155 kHz
Damage thresholds
Maximum average power density 100 W/cm2
Physical characteristics
Aperture diameter 10 mm
Absorber SiUV
Dimensions 38.1? x 27.4D mm
Weight 0.13 kg
Distance to sensor face 13.7 mm

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